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This is manufactured by onsemi. The manufacturer part number is 2N5550TAR. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 140 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 250mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in cut tape (ct) package . Its typical moisture sensitivity level is not applicable. It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5550, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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