onsemi 2N5550G

2N5550G onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
140 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Frequency - Transition:
300MHz
REACH Status:
REACH Unaffected
edacadModel:
2N5550G Models
edacadModelUrl:
/en/models/918240
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92 (TO-226)
Packaging:
Bulk
Power - Max:
625 mW
Base Product Number:
2N5550
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N5550G. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 140 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. In addition, it is reach unaffected. The transistor is a npn type. The 250mv @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92 (to-226) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5550, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 08/Nov/2014(PCN Obsolescence/ EOL)
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Multiple Devices Revision 26/Nov/2014(PCN Obsolescence/ EOL)
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2N5550, 5551(Datasheets)
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onsemi RoHS(Environmental Information)

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