onsemi 2N5401TA

2N5401TA onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
150 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Frequency - Transition:
400MHz
REACH Status:
REACH Unaffected
edacadModel:
2N5401TA Models
edacadModelUrl:
/en/models/973950
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Tape & Box (TB)
Power - Max:
625 mW
Base Product Number:
2N5401
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N5401TA. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 150 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 400mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 500mv @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5401, a base product number of the product. The product is designated with the ear99 code number.

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2N5401(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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onsemi RoHS(Environmental Information)

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