onsemi 2N5307

2N5307 onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
1.2 A
HTSUS:
8541.21.0095
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2mA, 5V
edacadModel:
2N5307 Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 200µA, 200mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/975973
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N5307
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is 2N5307. The maximum collector current includes 1.2 a. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 40 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 2000 @ 2ma, 5v is the minimum DC current gain at given voltage. The 1.4v @ 200µa, 200ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5307, a base product number of the product. The product is designated with the ear99 code number.

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2N5307(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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