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This is manufactured by onsemi. The manufacturer part number is 2N4123TAR. The maximum collector current includes 200 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 30 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 50 @ 2ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The 300mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n4123, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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