onsemi BC33825TA NPN Transistor, 800 mA, 30 V, 3-Pin TO-92

BC33825TA onsemi  NPN Transistor, 800 mA, 30 V, 3-Pin TO-92
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
50 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Collector Base Voltage:
10 V
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
BC33825TA Models
edacadModelUrl:
/en/models/975533
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
625 mW
Base Product Number:
BC338
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 800 mA 30 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is BC33825TA. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). It carries 50 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 800 ma. Additionally, it has 10 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 25 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 160 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The 700mv @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. to-92-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to bc338, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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BC337/338, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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