ON Semi BD679AG NPN Darlington Transistor, 4 A 80 V HFE:750, 3-Pin TO-225

BD679AG ON Semi  NPN Darlington Transistor, 4 A 80 V HFE:750, 3-Pin TO-225
onsemi

Product Information

Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Collector Cut-off Current:
0.2mA
Height:
11.04mm
Width:
2.66mm
Length:
7.74mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
BD679AG Models
edacadModelUrl:
/en/models/1476178
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Packaging:
Bulk
Power - Max:
40 W
Base Product Number:
BD679
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is ON Semi NPN Darlington Transistor 4 A 80 V HFE:750 3-Pin TO-225 manufactured by onsemi. The manufacturer part number is BD679AG. It features up to 750 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 7.74 x 2.66 x 11.04mm. The product is available in through hole configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 4 a continuous collector current . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It has a maximum 0.2ma collector cut-off current . In addition, the height is 11.04mm. Furthermore, the product is 2.66mm wide. Its accurate length is 7.74mm. The package is a sort of to-225. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 2.8 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 750 @ 2a, 3v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn - darlington type. The 2.8v @ 40ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500µa is the maximum current at collector cutoff. to-126 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 40 w. Moreover, it corresponds to bd679, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Assembly Change 28/Dec/2020(PCN Assembly/Origin)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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BD675(A),77(A),79(A),81(Datasheets)

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