Minimum DC Current Gain:
1000
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V dc
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 3V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
2N6667G Models
edacadModelUrl:
/en/models/918295
Transistor Type:
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
2 W
Base Product Number:
2N6667
ECCN:
EAR99
