onsemi TIP125G PNP Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

TIP125G onsemi  PNP Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220
onsemi

Product Information

Minimum DC Current Gain:
1000
Transistor Type:
PNP
Dimensions:
15.75 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Collector Cut-off Current:
0.5mA
Height:
4.82mm
Width:
10.28mm
Length:
15.75mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 3V
edacadModel:
TIP125G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
4V @ 20mA, 5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/920328
Transistor Type:
PNP - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
2 W
Base Product Number:
TIP125
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Darlington Transistor 8 A 60 V HFE:1000 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is TIP125G. It features up to 1000 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 15.75 x 10.28 x 4.82mm. The product is available in through hole configuration. Provides up to 65 w maximum power dissipation. The product has a maximum 8 a continuous collector current . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It has a maximum 0.5ma collector cut-off current . In addition, the height is 4.82mm. Furthermore, the product is 10.28mm wide. Its accurate length is 15.75mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 1000 @ 3a, 3v is the minimum DC current gain at given voltage. The 4v @ 20ma, 5a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500µa is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to tip125, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Bipolar Power Transistor TO220 Pkg Assembly & Test 16/Oct/2015(PCN Assembly/Origin)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)
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Mult Dev EOL 7/Jul/2021(PCN Obsolescence/ EOL)
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TIP120-22, TIP125-27(Datasheets)

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