Toshiba Semiconductor and Storage 2SD1223(TE16L1,NQ)

2SD1223-TE16L1-NQ- Toshiba Semiconductor and Storage 2SD1223(TE16L1,NQ)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 2V
Frequency - Transition:
-
Voltage - Collector Emitter Breakdown (Max):
80 V
edacadModel:
2SD1223(TE16L1,NQ) Models
edacadModelUrl:
/en/models/2062615
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 6mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
20µA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PW-MOLD
Packaging:
Tape & Reel (TR)
Power - Max:
1 W
Base Product Number:
2SD1223
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD1223(TE16L1,NQ). The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Furthermore, 1000 @ 3a, 2v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 80 v. The transistor is a npn - darlington type. The 1.5v @ 6ma, 3a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 20µa (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. pw-mold is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1 w. Moreover, it corresponds to 2sd1223, a base product number of the product. The product is designated with the ear99 code number.

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2SD1223(Datasheets)

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