Toshiba Semiconductor and Storage 2SC5359-O(Q)

2SC5359-O-Q- Toshiba Semiconductor and Storage 2SC5359-O(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
edacadModel:
2SC5359-O(Q) Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max):
230 V
edacadModelUrl:
/en/models/2062600
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Power - Max:
180 W
Base Product Number:
2SC5359
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5359-O(Q). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 800ma, 8a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(l) is the supplier device package value. The maximum power of the product is 180 w. Moreover, it corresponds to 2sc5359, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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