Deliver to
United Kingdom
This is manufactured by Microsemi IRE Division. The manufacturer part number is 2N4449. It has typical 12 weeks of manufacturer standard lead time. In addition, 400na is the maximum current at collector cutoff. It features bipolar (bjt) transistor npn 20v 360mw through hole to-46 (to-206ab). The transistor is a npn type. The product is available in through hole configuration. The 450mv @ 10ma, 100ma is the maximum Vce saturation. to-46 (to-206ab) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Moreover, the product comes in to-206ab, to-46-3 metal can. Furthermore, 20 @ 100ma, 1v is the minimum DC current gain at given voltage. The microsemi ire division's product offers user-desired applications.
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