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This is manufactured by Microsemi IRE Division. The manufacturer part number is JANTXV2N4150S. It has typical 20 weeks of manufacturer standard lead time. The maximum collector current includes 10a. It features bipolar (bjt) transistor npn 70v 10a 1w through hole to-39 (to-205ad). Furthermore, 40 @ 5a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 2.5v @ 1a, 10a is the maximum Vce saturation. The product military, mil-prf-19500/394, is a highly preferred choice for users. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 70v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10µa is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
For more information please check the datasheets.
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