Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is manufactured by Microsemi IRE Division. The manufacturer part number is JAN2N3635L. It has typical 23 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 140v 1a 1w through hole to-5. Furthermore, 100 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 600mv @ 5ma, 50ma is the maximum Vce saturation. The product military, mil-prf-19500/357, is a highly preferred choice for users. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 140v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205aa, to-5-3 metal can. In addition, 10µa is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
Basket Total:
£ 0
