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This is manufactured by Microsemi IRE Division. The manufacturer part number is JANTXV2N2219. It has typical 23 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor npn 30v 800ma 800mw through hole to-205ad. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/251, is a highly preferred choice for users. to-205ad is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10na is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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