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This is manufactured by Microsemi IRE Division. The manufacturer part number is JANTX2N3019. It has typical 23 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 80v 1a 800mw through hole to-5. Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/391, is a highly preferred choice for users. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-205aa, to-5-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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