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This is manufactured by Microsemi IRE Division. The manufacturer part number is JANTX2N2219A. It has typical 8 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor npn 50v 800ma 800mw through hole to-39. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/251, is a highly preferred choice for users. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10na is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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