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United Kingdom
This is manufactured by Microsemi IRE Division. The manufacturer part number is JAN2N5415S. It has typical 22 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 200v 1a 750mw through hole to-39 (to-205ad). Furthermore, 30 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 2v @ 5ma, 50ma is the maximum Vce saturation. The product military, mil-prf-19500/485, is a highly preferred choice for users. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 200v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 750mw. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 1ma is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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