Deliver to
United Kingdom
This is manufactured by Microsemi IRE Division. The manufacturer part number is 2N3637L. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 175v 1a 1w through hole to-5. Furthermore, 100 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 600mv @ 5ma, 50ma is the maximum Vce saturation. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 175v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205aa, to-5-3 metal can. In addition, 10µa is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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