Deliver to
United Kingdom
This is manufactured by Microsemi IRE Division. The manufacturer part number is 2N3250A. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 200ma. It features bipolar (bjt) transistor pnp 60v 200ma 360mw through hole to-39 (to-205ad). Furthermore, 50 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 500mv @ 5ma, 50ma is the maximum Vce saturation. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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