Central Semiconductor Corp 2N5551 TIN/LEAD

2N5551-TIN-LEAD Central Semiconductor Corp 2N5551 TIN/LEAD
Central Semiconductor Corp

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
300MHz
title:
2N5551 TIN/LEAD
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
625 mW
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N5551 TIN/LEAD. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 160 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. In addition, it is reach unaffected. The transistor is a npn type. The 200mv @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 625 mw. The product is designated with the ear99 code number.

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2N5550,2N5551(Datasheets)
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RoHS Cert(Environmental Information)

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