ON Semiconductor 6686-2N3906

ON Semiconductor

Product Information

Base Part Number:
2N3906
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Transistor Type:
PNP
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
50nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 6686-2N3906. Base Part Number: 2n3906. It features bipolar (bjt) transistor pnp 40v 200ma 250mhz 625mw through hole to-92-3. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 250mhz. The product is available in through hole configuration. The 400mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 200ma. In addition, 50na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices EOL 12/Apr/2019(PCN Obsolescence/ EOL)

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FAQs

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Yes. We ship 6686-2N3906 Internationally to many countries around the world.