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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS8110AS,126. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 150 @ 250ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The transistor is a npn type. The 200mv @ 100ma, 1a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 830 mw. Moreover, it corresponds to pbss8, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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