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This is manufactured by NXP USA Inc.. The manufacturer part number is BF421,112. The maximum collector current includes 50 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 300 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 50 @ 25ma, 20v is the minimum DC current gain at given voltage. The transition frequency of the product is 60mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 600mv @ 5ma, 30ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 10na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 830 mw. Moreover, it corresponds to bf421, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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