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This is manufactured by NXP USA Inc.. The manufacturer part number is 2N5551,412. The maximum collector current includes 300 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 160 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. In addition, it is reach unaffected. The transistor is a npn type. The 200mv @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 630 mw. Moreover, it corresponds to 2n55, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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