Minimum DC Current Gain:
35
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.97mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Operating Frequency:
100 MHz
Height:
0.97mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Emitter Base Voltage:
6 V
Maximum Collector Base Voltage:
75 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KST22
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
