SANYO Semiconductor (U.S.A) Corporation 2SD1913S

2SD1913S SANYO Semiconductor (U.S.A) Corporation
2SD1913S
SANYO Semiconductor (U.S.A) Corporation

Product Information

Current - Collector (Ic) (Max):
3A
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 3A 100MHz 2W Through Hole TO-220ML
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 2A
Supplier Device Package:
TO-220ML
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 500mA, 5V
Manufacturer:
SANYO Semiconductor (U.S.A) Corporation
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This is manufactured by SANYO Semiconductor (U.S.A) Corporation. The manufacturer part number is 2SD1913S. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 60v 3a 100mhz 2w through hole to-220ml. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in through hole configuration. The 1v @ 200ma, 2a is the maximum Vce saturation. to-220ml is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. Furthermore, 140 @ 500ma, 5v is the minimum DC current gain at given voltage. The sanyo semiconductor (u.s.a) corporation's product offers user-desired applications.

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2SB1274,2SD1913(Datasheets)

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