Central Semiconductor Corp 2N1131

Central Semiconductor Corp

Product Information

Manufacturer Standard Lead Time:
20 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 600mA 50MHz 2W Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 150mA, 10V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 15mA, 150mA
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
2W
Package / Case:
TO-205AD, TO-39-3 Metal Can
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
Central Semiconductor Corp
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N1131. It has typical 20 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 50v 600ma 50mhz 2w through hole to-39. Furthermore, 20 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 1.5v @ 15ma, 150ma is the maximum Vce saturation. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 100µa (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.

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2N1131(Datasheets)
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RoHS3 Cert(Environmental Information)

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FAQs

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