NXP USA Inc. 2N3904,116

2N3904-116 NXP USA Inc. 2N3904,116
NXP USA Inc.

Product Information

Base Part Number:
2N39
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
NXP USA Inc.
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This is manufactured by NXP USA Inc.. The manufacturer part number is 2N3904,116. Base Part Number: 2n39. It features bipolar (bjt) transistor npn 40v 200ma 300mhz 500mw through hole to-92-3. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in through hole configuration. The 200mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 200ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The nxp usa inc.'s product offers user-desired applications.

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2N3904 Datasheet(Datasheets)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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