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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N7370. The maximum collector current includes 12a. It features bipolar (bjt) transistor npn - darlington 100v 12a 100w through hole to-254aa. Furthermore, 1000 @ 6a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 3v @ 120ma, 12a is the maximum Vce saturation. The product military, mil-prf-19500/624, is a highly preferred choice for users. Moreover, the product comes in to-254-3, to-254aa (straight leads). to-254aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 100w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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