Microsemi Corporation JANTXV2N5339U3

Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
5A
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 5A 1W Surface Mount TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 2A, 2V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 500mA, 5A
Series:
Military, MIL-PRF-19500/560
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
100µA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N5339U3. The maximum collector current includes 5a. It features bipolar (bjt) transistor npn 100v 5a 1w surface mount to-39 (to-205ad). Furthermore, 60 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in surface mount configuration. The 1.2v @ 500ma, 5a is the maximum Vce saturation. The product military, mil-prf-19500/560, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 100µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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