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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N3501L. The maximum collector current includes 300ma. It features bipolar (bjt) transistor npn 150v 300ma 1w through hole to-5. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 400mv @ 15ma, 150ma is the maximum Vce saturation. The product military, mil-prf-19500/366, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 150v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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