Microsemi Corporation JANTXV2N3467

Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 1A 1W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 500mA, 1V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 100mA, 1A
Series:
Military, MIL-PRF-19500/348
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 175°C (TJ)
Power - Max:
1W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N3467. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 40v 1a 1w through hole to-39 (to-205ad). Furthermore, 40 @ 500ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.2v @ 100ma, 1a is the maximum Vce saturation. The product military, mil-prf-19500/348, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 100na (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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