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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N697. In addition, 10µa (icbo) is the maximum current at collector cutoff. It features bipolar (bjt) transistor npn 40v 600mw through hole to-5. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 15ma, 150ma is the maximum Vce saturation. The product military, mil-prf-19500/99, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 600mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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