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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N6353. The maximum collector current includes 5a. It features bipolar (bjt) transistor npn - darlington 150v 5a 2w through hole to-66 (to-213aa). The transistor is a npn - darlington type. The product is available in through hole configuration. The 2.5v @ 10ma, 5a is the maximum Vce saturation. The product military, mil-prf-19500/472, is a highly preferred choice for users. Moreover, the product comes in to-213aa, to-66-3. to-66 (to-213aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 150v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 2w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 1000 @ 5a, 5v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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