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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N2432. The maximum collector current includes 100ma. It features bipolar (bjt) transistor npn 30v 100ma 360mw through hole to-18 (to-206aa). Furthermore, 80 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The product military, mil-prf-19500/313, is a highly preferred choice for users. Moreover, the product comes in to-206aa, to-18-3 metal can. to-18 (to-206aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 360mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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