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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N1486. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 55v 3a 1.75w through hole to-8. Furthermore, 35 @ 750ma, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 750mv @ 40ma, 750ma is the maximum Vce saturation. The product military, mil-prf-19500/207, is a highly preferred choice for users. Moreover, the product comes in to-233aa, to-8-3 lens top metal can. to-8 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 55v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.75w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 15µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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