Diodes Incorporated ZX3CDBS1M832TA

ZX3CDBS1M832TA Diodes Incorporated
ZX3CDBS1M832TA
ZX3CDBS1M832TA
ET15921445
Diodes Incorporated

Product Information

Base Part Number:
ZX3CDBS1M832
Detailed Description:
Bipolar (BJT) Transistor NPN + Diode (Isolated) 20V 4.5A 140MHz 3W Surface Mount 8-MLP (3x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Transistor Type:
NPN + Diode (Isolated)
Frequency - Transition:
140MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
270mV @ 125mA, 4.5A
Supplier Device Package:
8-MLP (3x2)
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
3W
Customer Reference:
Package / Case:
8-VDFN Exposed Pad
Current - Collector (Ic) (Max):
4.5A
Current - Collector Cutoff (Max):
25nA
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZX3CDBS1M832TA. Base Part Number: zx3cdbs1m832. It features bipolar (bjt) transistor npn + diode (isolated) 20v 4.5a 140mhz 3w surface mount 8-mlp (3x2). Furthermore, 200 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a npn + diode (isolated) type. The transition frequency of the product is 140mhz. The product is available in surface mount configuration. The 270mv @ 125ma, 4.5a is the maximum Vce saturation. 8-mlp (3x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 3w. Moreover, the product comes in 8-vdfn exposed pad. The maximum collector current includes 4.5a. In addition, 25na is the maximum current at collector cutoff. The diodes incorporated's product offers user-desired applications.

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MLP322, 832 Pkg 20/Dec/2010(PCN Obsolescence/ EOL)
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ZX3CDBS1M832(Datasheets)

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