Rohm Semiconductor 2SD2396K

2SD2396K Rohm Semiconductor
Rohm Semiconductor

Product Information

Current - Collector (Ic) (Max):
3A
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 3A 40MHz 2W Through Hole TO-220FN
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 500mA, 4V
Transistor Type:
NPN
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 50mA, 2A
Supplier Device Package:
TO-220FN
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SD2396K. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 60v 3a 40mhz 2w through hole to-220fn. Furthermore, 1000 @ 500ma, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 40mhz. The product is available in through hole configuration. The 800mv @ 50ma, 2a is the maximum Vce saturation. to-220fn is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. In addition, 100µa (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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2SD2396(Datasheets)

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