Rohm Semiconductor 2SD1763AE

2SD1763AE Rohm Semiconductor
2SD1763AE
Rohm Semiconductor

Product Information

Current - Collector (Ic) (Max):
1.5A
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 1.5A 80MHz 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
80MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 100mA, 1A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SD1763AE. The maximum collector current includes 1.5a. It features bipolar (bjt) transistor npn 160v 1.5a 80mhz 2w through hole to-220fp. Furthermore, 60 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 80mhz. The product is available in through hole configuration. The 2v @ 100ma, 1a is the maximum Vce saturation. to-220fp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. In addition, 1µa (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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2SB1zzz(A), 2SDzzzz(A)(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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