Toshiba Semiconductor and Storage 2SD2257(Q,M)

2SD2257-Q-M- Toshiba Semiconductor and Storage 2SD2257(Q,M)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2A, 2V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1.5mA, 1.5A
Voltage - Collector Emitter Breakdown (Max):
100 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Power - Max:
2 W
Base Product Number:
2SD2257
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD2257(Q,M). The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 2000 @ 2a, 2v is the minimum DC current gain at given voltage. The 1.5v @ 1.5ma, 1.5a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 100 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 10µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2sd2257, a base product number of the product. The product is designated with the ear99 code number.

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2SD2257(Datasheets)

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