Toshiba Semiconductor and Storage 2SD1407A-Y(F)

2SD1407A-Y-F- Toshiba Semiconductor and Storage 2SD1407A-Y(F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 5V
Frequency - Transition:
12MHz
title:
2SD1407A-Y(F)
Voltage - Collector Emitter Breakdown (Max):
100 V
edacadModel:
2SD1407A-Y(F) Models
edacadModelUrl:
/en/models/1986092
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
2V @ 400mA, 4A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Packaging:
Tube
Power - Max:
30 W
Base Product Number:
2SD1407
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD1407A-Y(F). The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 120 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 12mhz. The maximum collector emitter breakdown voltage of the product is 100 v. The transistor is a npn type. The 2v @ 400ma, 4a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 30 w. Moreover, it corresponds to 2sd1407, a base product number of the product. The product is designated with the ear99 code number.

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2SD1407A(Datasheets)

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