Toshiba Semiconductor and Storage 2SC5201,T6F(J

Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
50 mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 20mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 500mA, 20mA
Voltage - Collector Emitter Breakdown (Max):
600 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92MOD
Power - Max:
900 mW
Base Product Number:
2SC5201
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5201,T6F(J. The maximum collector current includes 50 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 100 @ 20ma, 5v is the minimum DC current gain at given voltage. The 1v @ 500ma, 20ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 600 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sc5201, a base product number of the product. The product is designated with the ear99 code number.

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2SC5201(Datasheets)

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