Toshiba Semiconductor and Storage 2SC2482(FJTN,F,M)

2SC2482-FJTN-F-M- Toshiba Semiconductor and Storage 2SC2482(FJTN,F,M)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 10V
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
300 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92MOD
Power - Max:
900 mW
Base Product Number:
2SC2482
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2482(FJTN,F,M). The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 30 @ 20ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 1v @ 1ma, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 300 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sc2482, a base product number of the product. The product is designated with the ear99 code number.

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2SC2482(Datasheets)

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