Toshiba Semiconductor and Storage 2SC2235-O(FA1,F,M)

Enrgtech Part No: ET14927813
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Manufacturer Part No:
2SC2235-O(FA1,F,M)
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Manufacturer: Toshiba Semiconductor and Storage

2SC2235-O-FA1-F-M- Toshiba Semiconductor and Storage 2SC2235-O(FA1,F,M)

Product Information

Current - Collector (Ic) (Max):

800 mA

HTSUS:

8541.21.0075

Operating Temperature:

150°C (TJ)

Package / Case:

TO-226-3, TO-92-3 Long Body

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 100mA, 5V

Frequency - Transition:

120MHz

title:

2SC2235-O(FA1,F,M)

Voltage - Collector Emitter Breakdown (Max):

120 V

Transistor Type:

NPN

Vce Saturation (Max) @ Ib, Ic:

1V @ 50mA, 500mA

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

100nA (ICBO)

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2235-O(FA1,F,M). The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 80 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The maximum collector emitter breakdown voltage of the product is 120 v. The transistor is a npn type. The 1v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sc2235, a base product number of the product. The product is designated with the ear99 code number.

2SC2235(Datasheets)

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