Toshiba Semiconductor and Storage 2SC2235-O(FA1,F,M)

2SC2235-O-FA1-F-M- Toshiba Semiconductor and Storage 2SC2235-O(FA1,F,M)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 100mA, 5V
Frequency - Transition:
120MHz
title:
2SC2235-O(FA1,F,M)
Voltage - Collector Emitter Breakdown (Max):
120 V
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92MOD
Packaging:
Bulk
Power - Max:
900 mW
Base Product Number:
2SC2235
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2235-O(FA1,F,M). The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 80 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The maximum collector emitter breakdown voltage of the product is 120 v. The transistor is a npn type. The 1v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sc2235, a base product number of the product. The product is designated with the ear99 code number.

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2SC2235(Datasheets)

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