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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2229(TE6SAN1F,M. The maximum collector current includes 50 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 70 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 500mv @ 1ma, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 150 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to 2sc2229, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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