Toshiba Semiconductor and Storage 2SC2229-O(MITIF,M)

Enrgtech Part No: ET14927794
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Manufacturer Part No:
2SC2229-O(MITIF,M)
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Manufacturer: Toshiba Semiconductor and Storage

2SC2229-O-MITIF-M- Toshiba Semiconductor and Storage 2SC2229-O(MITIF,M)

Product Information

Current - Collector (Ic) (Max):

50 mA

HTSUS:

8541.21.0075

Operating Temperature:

150°C (TJ)

Package / Case:

TO-226-3, TO-92-3 Long Body

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 10mA, 5V

Frequency - Transition:

120MHz

title:

2SC2229-O(MITIF,M)

Voltage - Collector Emitter Breakdown (Max):

150 V

Transistor Type:

NPN

Vce Saturation (Max) @ Ib, Ic:

500mV @ 1mA, 10mA

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

100nA (ICBO)

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2229-O(MITIF,M). The maximum collector current includes 50 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 70 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The maximum collector emitter breakdown voltage of the product is 150 v. The transistor is a npn type. The 500mv @ 1ma, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 800 mw. Moreover, it corresponds to 2sc2229, a base product number of the product. The product is designated with the ear99 code number.

2SC2229(Datasheets)

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