Toshiba Semiconductor and Storage 2SA965-O(TE6,F,M)

Enrgtech Part No: ET14927774
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Manufacturer Part No:
2SA965-O(TE6,F,M)
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Manufacturer: Toshiba Semiconductor and Storage

2SA965-O-TE6-F-M- Toshiba Semiconductor and Storage 2SA965-O(TE6,F,M)

Product Information

Current - Collector (Ic) (Max):

800 mA

HTSUS:

8541.21.0075

Operating Temperature:

150°C (TJ)

Package / Case:

TO-226-3, TO-92-3 Long Body

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 100mA, 5V

Frequency - Transition:

120MHz

Vce Saturation (Max) @ Ib, Ic:

1V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max):

120 V

Transistor Type:

PNP

Package:

Bulk

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

100nA (ICBO)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA965-O(TE6,F,M). The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 80 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 1v @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 120 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sa965, a base product number of the product. The product is designated with the ear99 code number.

2SA965(Datasheets)

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Toshiba Semiconductor and Storage 2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

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