Toshiba Semiconductor and Storage 2SA1931,NETQ(M

2SA1931-NETQ-M Toshiba Semiconductor and Storage 2SA1931,NETQ(M
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 1V
Frequency - Transition:
60MHz
Vce Saturation (Max) @ Ib, Ic:
400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Power - Max:
2 W
Base Product Number:
2SA1931
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1931,NETQ(M. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 1a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 60mhz. The 400mv @ 200ma, 2a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2sa1931, a base product number of the product. The product is designated with the ear99 code number.

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2SA1931(Datasheets)

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