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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1930,Q(J. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1v @ 100ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 180 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2sa1930, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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